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| DISCRETE SEMICONDUCTORS DATA SHEET BF909; BF909R N-channel dual gate MOS-FETs Product specification File under Discrete Semiconductors, SC07 1995 Apr 25 Philips Semiconductors Philips Semiconductors Product specification N-channel dual gate MOS-FETs FEATURES * Specially designed for use at 5 V supply voltage * High forward transfer admittance * Short channel transistor with high forward transfer admittance to input capacitance ratio * Low noise gain controlled amplifier up to 1 GHz * Superior cross-modulation performance during AGC. APPLICATIONS * VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment. DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The BF909; BF909R transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. PINNING PIN 1 2 3 4 SYMBOL s, b d g2 g1 source drain gate 2 gate 1 DESCRIPTION handbook, halfpage d 3 d handbook, halfpage 4 3 4 g2 g1 1 Top view g2 g1 2 s,b Top view 2 MAM124 1 MAM125 - 1 s,b BF909 marking code: M28. BF909R marking code: M29. Fig.1 Simplified outline (SOT143) and symbol. Fig.2 Simplified outline (SOT143R) and symbol. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj yfs Cig1-s Crs F 1995 Apr 25 drain current total power dissipation operating junction temperature forward transfer admittance input capacitance at gate 1 reverse transfer capacitance noise figure f = 1 MHz f = 800 MHz 2 PARAMETER drain-source voltage CONDITIONS - - - - 36 - - - MIN. - - - - 43 3.6 35 2 TYP. MAX. 7 40 200 150 50 4.3 50 2.8 UNIT V mA mW C mS pF fF dB Philips Semiconductors Product specification N-channel dual gate MOS-FETs LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS ID IG1 IG2 Ptot PARAMETER drain-source voltage drain current gate 1 current gate 2 current total power dissipation BF909 BF909R Tstg Tj Note 1. Device mounted on a printed-circuit board. storage temperature operating junction temperature see Fig.3 up to Tamb = 50 C; note 1 up to Tamb = 40 C; note 1 - - -65 - CONDITIONS - - - - MIN. BF909; BF909R MAX. 7 40 10 10 200 200 +150 150 V UNIT mA mA mA mW mW C C MLB935 handbook, halfpage 250 Ptot (mW) 200 150 BF909R 100 BF909 50 0 0 50 100 150 200 Tamb ( oC) Fig.3 Power derating curves. 1995 Apr 25 3 Philips Semiconductors Product specification N-channel dual gate MOS-FETs THERMAL CHARACTERISTICS SYMBOL Rth j-a BF909 BF909R Rth j-s thermal resistance from junction to soldering point BF909 BF909R Notes 1. Device mounted on a printed-circuit board. 2. Ts is the temperature at the soldering point of the source lead. STATIC CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL V(BR)G1-SS V(BR)G2-SS V(F)S-G1 V(F)S-G2 VG1-S(th) VG2-S(th) IDSX IG1-SS IG2-SS Note 1. RG1 connects gate 1 to VGG = 5 V; see Fig.18. PARAMETER gate 1-source breakdown voltage gate 2-source breakdown voltage forward source-gate 1 voltage forward source-gate 2 voltage gate 1-source threshold voltage gate 2-source threshold voltage drain-source current gate 1 cut-off current gate 2 cut-off current CONDITIONS VG2-S = VDS = 0; IG1-S = 10 mA VG1-S = VDS = 0; IG2-S = 10 mA VG2-S = VDS = 0; IS-G1 = 10 mA VG1-S = VDS = 0; IS-G2 = 10 mA VG2-S = 4 V; VDS = 5 V; ID = 20 A VG1-S = VDS = 5 V; ID = 20 A VG2-S = 4 V; VDS = 5 V; RG1 = 120 k; note 1 VG1-S = 5 V; VG2-S = VDS = 0 VG2-S = 5 V; VG1-S = VDS = 0 6 6 0.5 0.5 0.3 0.3 12 - - note 2 Ts = 92 C Ts = 78 C PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 BF909; BF909R VALUE 500 550 290 360 UNIT K/W K/W K/W K/W MIN. MAX. 15 15 1.5 1.5 1 1.2 20 50 50 V V V V V V UNIT mA nA nA DYNAMIC CHARACTERISTICS Common source; Tamb = 25 C; VDS = 5 V; VG2-S = 4 V; ID = 15 mA; unless otherwise specified. SYMBOL yfs Cig1-s Cig2-s Cos Crs F PARAMETER forward transfer admittance input capacitance at gate 1 input capacitance at gate 2 drain-source capacitance noise figure f = 1 MHz f = 1 MHz f = 1 MHz f = 800 MHz; GS = GSopt; BS = BSopt CONDITIONS pulsed; Tj = 25 C MIN. 36 - - - - - TYP. 43 3.6 2.3 2.3 35 2 MAX. 50 4.3 3 3 50 2.8 UNIT mS pF pF pF fF dB reverse transfer capacitance f = 1 MHz 1995 Apr 25 4 Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF909; BF909R MLB936 MLB937 handbook, halfpage 110 handbook, halfpage 30 Vunw (dBV) 100 ID (mA) V G2 S = 4 V 3 V 2.5 V 2V 20 1.5 V 90 10 1V 80 0 10 20 30 40 50 gain reduction (dB) 0 0 0.4 0.8 1.2 1.6 2.0 V G1 S (V) VDS = 5 V; VGG = 5 V; fw = 50 MHz. funw = 60 MHz; Tamb = 25 C; RG1 = 120 k. Fig.4 Unwanted voltage for 1% cross-modulation as a function of gain reduction; typical values; see Fig.18. VDS = 5 V. Tj = 25 C. Fig.5 Transfer characteristics; typical values. MLB938 handbook, halfpage 30 V G1 S = 1.4 V handbook, halfpage 200 MLB939 ID (mA) 20 1.3 V 1.2 V I G1 (A) 150 V G2 S = 4 V 3.5 V 3V 1.1 V 1.0 V 0.9 V 50 2V 100 2.5 V 10 0 0 2 4 6 8 10 V DS (V) 0 0 1 2 V G1 S (V) 3 VDS = 5 V. VG2-S = 4 V. Tj = 25 C. VDS = 5 V. Tj = 25 C. Fig.7 Fig.6 Output characteristics; typical values. Gate 1 current as a function of gate 1 voltage; typical values. 1995 Apr 25 5 Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF909; BF909R MLB940 MLB941 handbook, halfpage 60 handbook, halfpage 25 y fs (mS) 40 V G2 S = 4 V 3.5 V 3V ID (mA) 20 15 2.5 V 10 20 5 2V 0 0 10 20 I D (mA) 30 0 0 20 40 I G1 (A) 60 VDS = 5 V. Tj = 25 C. VDS = 5 V; VG2-S = 4 V. Tj = 25 C. Fig.8 Forward transfer admittance as a function of drain current; typical values. Fig.9 Drain current as a function of gate 1 current; typical values. handbook, halfpage 16 MLB942 MLB943 handbook, halfpage 30 ID (mA) 12 ID (mA) 20 R G1 = 47 k 68 k 82 k 100 k 120 k 150 k 8 180 k 220 k 10 4 0 0 2 4 V GG (V) 6 0 0 2 4 6 V GG = V DS (V) 8 VDS = 5 V; VG2-S = 4 V. RG1 = 120 k (connected to VGG); Tj = 25 C. VG2-S = 4 V. RG1 connected to VGG; Tj = 25 C. Fig.10 Drain current as a function of gate 1 supply voltage (= VGG); typical values; see Fig.18. Fig.11 Drain current as a function of gate 1 (= VGG) and drain supply voltage; typical values; see Fig.18. 1995 Apr 25 6 Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF909; BF909R MLB944 handbook, halfpage 20 ID (mA) 16 handbook, halfpage 40 MLB945 V GG = 5 V 4.5 V 4V 3.5 V I G1 (A) 30 V GG = 5 V 4.5 V 4V 12 3V 20 3.5 V 3V 8 10 4 0 0 2 4 V G2 S (V) 6 0 0 2 4 V G2 S (V) 6 VDS = 5 V; Tj = 25 C. RG1 = 120 k (connected to VGG). VDS = 5 V; Tj = 25 C. RG1 = 120 k (connected to VGG). Fig.12 Drain current as a function of gate 2 voltage; typical values; see Fig.18. Fig.13 Gate 1 current as a function of gate 2 voltage; typical values; see Fig.18. 10 2 handbook, halfpage y is (mS) 10 b is MLB946 10 3 y rs (S) 10 2 MLB947 10 3 rs (deg) rs 10 2 y rs 1 g is 10 10 10 1 10 102 f (MHz) 10 3 1 10 1 102 f (MHz) 10 3 VDS = 5 V; VG2 = 4 V. ID = 15 mA; Tamb = 25 C. VDS = 5 V; VG2 = 4 V. ID = 15 mA; Tamb = 25 C. Fig.14 Input admittance as a function of frequency; typical values. Fig.15 Reverse transfer admittance and phase as a function of frequency; typical values. 1995 Apr 25 7 Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF909; BF909R 10 2 y fs MLB948 MLB949 10 2 handbook, halfpage 10 y fs (mS) fs (deg) yos (mS) 1 bos 10 fs 10 10 1 gos 1 10 1 102 f (MHz) 10 3 10 2 10 102 f (MHz) 10 3 VDS = 5 V; VG2 = 4 V. ID = 15 mA; Tamb = 25 C. VDS = 5 V; VG2 = 4 V. ID = 15 mA; Tamb = 25 C. Fig.16 Forward transfer admittance and phase as a function of frequency; typical values. Fig.17 Output admittance as a function of frequency; typical values. VAGC R1 10 k C1 4.7 nF C3 12 pF C2 R GEN 50 VI R2 50 4.7 nF R3 10 DUT R G1 C5 2.2 pF L1 350 nH C4 4.7 nF RL 50 VGG VDS MLD151 Fig.18 Cross-modulation test set-up. 1995 Apr 25 8 Philips Semiconductors Product specification N-channel dual gate MOS-FETs Table 1 f (MHz) 50 100 200 300 400 500 600 700 800 900 1000 Table 2 Scattering parameters: Tamb = 25 C; VDS = 5 V; VG2-S = 4 V; ID = 15 mA s11 MAGNITUDE (ratio) 0.985 0.978 0.957 0.931 0.899 0.868 0.848 0.816 0.792 0.772 0.754 ANGLE (deg) -6.4 -12.6 -25.0 -36.5 -47.6 -57.4 -66.6 -74.6 -82.2 -89.3 -95.6 s21 MAGNITUDE (ratio) 4.064 3.997 3.886 3.682 3.484 3.260 3.053 2.829 2.652 2.470 2.328 ANGLE (deg) 172.3 164.9 150.8 137.3 123.8 111.7 101.0 90.3 79.9 69.5 59.5 s12 MAGNITUDE (ratio) 0.001 0.002 0.005 0.006 0.007 0.007 0.006 0.005 0.005 0.005 0.006 ANGLE (deg) 86.9 82.7 74.3 68.9 59.6 57.9 58.5 65.5 83.3 114.9 138.7 BF909; BF909R s22 MAGNITUDE (ratio) 0.985 0.982 0.973 0.960 0.947 0.936 0.927 0.919 0.913 0.910 0.909 ANGLE (deg) -3.2 -6.4 -12.6 -18.6 -24.2 -29.6 -34.8 -39.8 -44.6 -49.5 -54.6 Noise data: Tamb = 25 C; VDS = 5 V; VG2-S = 4 V; ID = 15 mA f (MHz) 800 Fmin (dB) 2.00 opt (ratio) 0.603 (deg) 67.71 rn 0.581 1995 Apr 25 9 Philips Semiconductors Product specification N-channel dual gate MOS-FETs PACKAGE OUTLINES BF909; BF909R handbook, full pagewidth 0.75 0.60 0.150 0.090 4 0.1 max 10 max o 3.0 2.8 1.9 3 B A 0.2 M A B 10 max o 1.4 1.2 2.5 max 1 1.1 max o 2 0.1 M A B 30 max 0.88 0 0.1 1.7 0.48 0 0.1 MBC845 TOP VIEW Dimensions in mm. Fig.19 SOT143. handbook, full pagewidth 0.40 0.25 0.150 0.090 3 0.1 max 10 max o 3.0 2.8 1.9 4 B A 0.2 M A 10 max o 1.4 1.2 2.5 max 2 1.1 max 0.48 0.38 1.7 0.1 M B 1 0.88 0.78 30 max o MBC844 TOP VIEW Dimensions in mm. Fig.20 SOT143R. 1995 Apr 25 10 Philips Semiconductors Product specification N-channel dual gate MOS-FETs DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BF909; BF909R This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1995 Apr 25 11 |
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